
Product Summary
Manufacturer: Kingston
Mfg Part#: KHX1866C11D3P1K2/8G
Buy.com Sku: 222586269
UPC: 740617190779
UPC 14: 00740617190779
Buy.com Sales Rank: 67938
See more in Computer Memory

| Kingston's KHX1866C11S3P1K2/8G is a kit of two 512M x 64-bit (4GB) DDR3-1866 CL11 SDRAM (Synchronous DRAM) 2Rx8 memory modules, based on sixteen 256M x 8-bit DDR3 FBGA components per module. Total kit capacity is 8GB. Each module kit has been tested to run at JEDEC DDR3-1866 at a low latency timing of 11-11-11 at 1.5V. Additional timing parameters are shown in the PnP Timing Parameters section. Each 240-pin DIMM uses gold contact fingers and requires +1.5V. |
Features
| JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply | |
| VDDQ = 1.5V (1.425V ~ 1.575V) | |
| 933MHz fCK for 1866Mb/sec/pin | |
| 8 independent internal bank | |
| Programmable CAS Latency: 11, 10, 9, 8, 7, 6, 5 | |
| Posted CAS | |
| Programmable Additive Latency: 0, CL - 2, or CL - 1 clock | |
| Programmable CAS Write Latency(CWL) = 9 (DDR3-1866) | |
| 8-bit pre-fetch | |
| Burst Length: 8 (Interleave without any limit, sequential with | |
| starting address “000” only), 4 with tCCD = 4 which does not | |
| allow seamless read or write [either on the fly using A12 or | |
| MRS] | |
| Bi-directional Differential Data Strobe | |
| Internal(self) calibration : Internal self calibration through ZQ | |
| pin (RZQ : 240 ohm ± 1%) | |
| On Die Termination using ODT pin | |
| Average Refresh Period 7.8us at lower than TCASE 85°C, | |
| 3.9us at 85°C < TCASE < 95°C | |
| Asynchronous Reset | |
| PCB : Height 1.180” (30.00mm), single sided component |
Tech Specs
| CL(IDD): 11 cycles | |
| Row Cycle Time (tRCmin): 47.91ns (min.) | |
| Refresh to Active/Refresh/Command Time (tRFCmin): 160ns (min.) | |
| Row Active Time (tRASmin): 32ns (min.) | |
| Power (Operating): TBD* (per module) | |
| UL Rating: 94 V - 0 | |
| Operating Temperature: 0 C to 85 C | |
| Storage Temperature: -55 C to +100 C | |
| *Power will vary depending on the SDRAM used. |

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